Research on Junction Temperature Exaction of Power Electronic Devices Based on Voltage Rise Period Parameters

Abstract

In this paper, the abrupts/maximum junction temperature of the power device is mainly concerned, which generally occurs in the turn-off process, that is, the parameters in the turn-off process are usually used as temperature-sensitive electrical parameters (TSEPs) to detect the junction temperature, including the voltage rising process and the current falling process. The influence of junction temperature on the process of voltage rise and current fall is demonstrated through the SABER simulation experiment and H-bridge inverter circuit. Besides, the mechanism of junction temperature dependence in these two stages is also paid attention to. The analysis results show that the influence of junction temperature on the voltage rise process is more significant than that of the current fall process during the turn-off process. The actual experimental results show that the voltage rise period parameters (voltage rise time/voltage rise loss) can be used as TSEPs for high precision junction temperature detection.