Abstract
Separation-by-implanted-oxygen (SIMOX) material was modified by silicon ions implantation with different techniques in this work, and the chemical bonds of Si in the buried oxide layer (BOX) of the SIMOX wafers were investigated with X-ray photoelectron spectroscopy (XPS) method. The results of Si 2p were presented to demonstrate the modification mechanism of the SIMOX materials, which could be resulted from the formation of different Si chemical structures in the silicon oxidation by the ions implantation with the post anneal process. The results of ID–VG characteristics on the wafers with Pseudo-MOS method showed that the processes of the buried oxide affected the character of the ID–VG curves of the Pseudo-MOS.
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