Abstract
The mechanism responsible for scanning probe field-induced oxidation in ambient air is attributed to an electrochemical process, i.e., anodic oxidation or anodization,after the analyses is given of a surface of a sample exposed to air. The effects of biases, tip speeds on morphology of field-induced oxidation, are introduced and deduced in the form of kinetics formula of oxidation growth. The field-induced oxidation of hydrogen-passivated Si (Si:H)using contact-mode AFM in air at room temperature is investigated. The result achieved from the experiment and that drawn from theoretical analysis are identical, which indicates the accuracy of the experimental operation.This experiment suggested that it may be used for further investigation of field-induced oxidation technology.
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