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Abstract
To improve the electron collection efficiency of gallium nitride (GaN) nanorod array photocathode, external electric field is used to assist collect photoelectrons and a theoretical model of field‐assisted photoelectric emission for GaN nanorod array is established herein. The results indicate that inclined incident light can improve the photoelectron collection efficiency on the side surface of the nanorod and that external electric field can promote the drifting of the photoelectron to the top surface of the nanorod. The square array with a filling fraction of 0.7 reaches its maximum photoelectron collection efficiency at the incident angle of 5° and field intensity of 0.1 V μm−1. This paper might play a theoretical guiding role in the fabrication of photodetectors with high photoelectric conversion efficiency.
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