Research on Fault Prediction of Power Devices in Rod Control Power Cabinets Based on BiTCN-Attention Transfer Learning Model

Abstract

The Insulated Gate Bipolar Transistor (IGBT) is the key power device in the rod control power cabinet of nuclear power plants; its reliable operation is of great significance for ensuring the safe and economical operation of the nuclear power plants. Therefore, it is necessary to conduct fault prediction research on IGBT to achieve better condition-based maintenance and improve its operational reliability. However, power cabinets often operate under multiple, complex working conditions, so predicting IGBT faults from single working condition data usually has limitations and low accuracy. Its failure probability has an important relationship with the actual operating conditions of the cabinet. In order to improve the reliability and maintainability of the control power cabinet in nuclear power plants, this paper takes IGBTs in the rod control power cabinet as the object and makes full use of the data of IGBTs under multiple working conditions to carry out research on the cross-condition fault prediction of IGBTs under multiple-source working conditions. A transfer learning (TL) model based on a bidirectional time convolutional network (BiTCN) combined with attention was proposed to solve the problem of low accuracy of cross-operating fault prediction in a multi-source domain. Firstly, an IGBT fault simulation model was built to collect the life cycle state data of the module under different working conditions. Then, after pre-processing such as removing outliers, kernel principal component analysis (KPCA) was used to integrate all source domain data, obtain source domain characterization data, and train the BiTCN-attention model. Finally, the BiTCN-attention model trained in the source domain was transferred, and the model was fine-tuned according to the target domain data. Simulation results show that the accuracy of the proposed BiTCN-attention transfer learning prediction method can reach more than 99%, which is significantly better than that of the recurrent neural network transfer learning (RNN-TL) model, long short-term memory network transfer learning (LSTM-TL) model, gated cyclic unit transfer learning (GRU-TL) model, and time convolutional network transfer learning (TCN-TL) model. This method can not only reduce the inconsistency of fault characteristic values caused by changes in working conditions but also accurately predict the degradation trend when only early fault data are available, providing an effective solution for IGBT fault prediction across working conditions in multi-source domains.