Abstract
Electrostatic discharge (ESD) transient events can often damage semiconductor components. Therefore, the ultrahigh-voltage (UHV) circular n-channel lateral diffused metal-oxide-semiconductor transistor (nLDMOS) usually used in power electronics needs to have ESD self-protection capabilities. In this paper, the geometric parameters of 300-V and 200-V UHV circular nLDMOSs were modulated using different layouts at the drain side. The high-voltage p-well (HVPW) layer was used to form various super junctions (SJs) in the drift region. The modulations were classified as SJ length, SJ concentration-gradient thickness, HVPW ring-sector, and rotated SJ concentration gradient modulations in the drift region. Various HVPWs were used to produce several SJs in the drain drift region. According to the final measurement results, all modulation processes maintained the original physical characteristics of high breakdown voltage. Devices with the SJ length and SJ concentration-gradient thickness’s modulations provided the best ESD robustness. The ESD testing value of the human-body model (HBM) will increase with the increase of the SJ length and SJ thickness modulations. The HBM value increased from the 1500 V reference to 4000V (increased by 166.66%).
Highlights
The advancement of semiconductor technology has enabled the realization of compact components
In order to solve the weak electrostatic discharge (ESD) problem of UHV n-channel lateral diffused metal-oxide-semiconductor transistor (nLDMOS) components, this paper has studied a variety of more comprehensive super junctions (SJs)-nLDMOS structures
This study investigated SJ length, SJ concentration gradient thickness, high-voltage p-well (HVPW) ringsector, and the rotated SJ concentration gradient modulation
Summary
The advancement of semiconductor technology has enabled the realization of compact components. A super-junction (SJ) structure [21]–[31] is usually used in 200-1000 V UHV nLDMOS to increase the device breakdown voltage (BV), which can improve the trade-off between BV and ON-resistance. In order to solve the weak ESD problem of UHV nLDMOS components, this paper has studied a variety of more comprehensive SJ-nLDMOS structures. These novel SJ structures use super junctions of different shapes, and use discrete methods to form super junctions of different concentrations. We will develop various SJ structures in the drain drift region and discussion how to improve the ESD protection capability while maintaining a fixed high breakdown voltage. In order to avoid false triggering, the active region of the LDMOS self-protection device is higher than the ((Vop)max)
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