Abstract
The electro-thermal model of Insulated Gate Bipolar Transistor(IGBT) can be used to simulate the operating characteristics of devices at different temperatures. Considering the relationship between internal parameters, semiconductor physical constants and temperature, the electrical model of IGBT at a single temperature is extended to an electro-thermal model which can reflect the working characteristics at different temperatures. This model takes into account both simulation accuracy and simulation speed. Finally, the IGB model is selected, and the IGBT switching transient at different temperatures is verified by experiments.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: IOP Conference Series: Earth and Environmental Science
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
