Abstract
The influence of technological parameters of homogeneous Cu–W film prepared by ion beam sputtering on film structure is researched. The results show that in homogeneous Cu–W film prepared by ion beam sputtering, tungsten exists in the way of solubilizing in part of copper with β-tungsten as the skeleton. With the increase of copper target power, the grain size of copper firstly increases and then decreases. With the increase of tungsten target power, β-tungsten tends to transform to the amorphous state and the grain size of copper obviously decreases. The deposition rate of film is mainly determined by tungsten target power. When the air pressure is lower than 1.0 Pa, with the increase of air pressure, the grain size of copper decreases. When the air pressure is higher than 1.0 Pa, the air pressure has no influence on the film structure.
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