Abstract
In this paper, the research on bending and low resistance drift of In2Se3/Sb composite multilayer films based on flexible substrate were investigated. The flexible film can still complete the phase transition after being at different bending radius for 24 h and bending 2 × 104 times. With the increase of bending times, the crystalline resistance of the film increased gradually, the band gap widened. Compared with the flat film, the stretched and pressed films had a lower resistance drift. External forces such as bending, stretching and pressing will reduce the surface roughness of the flexible film. The stability of the multilayer structure for flexible thin film was checked by transmission electron microscopy. The devices based on In2Se3/Sb composite multilayer thin film were prepared on a flexible substrate polyether ether ketone. The device can achieve Set and Reset operation in the states of flat, bending and after bending 100 times. It had low power consumption. This study could provide a potential option for flexible information storage.
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