Abstract
The band-edge emission properties from a homoepitaxial chemical vapor deposition single-crystal diamond have been studied in detail through photoluminescence (PL) measurement from room temperature down to 8 K. In particular, we firstly observed the third phonon replica of the intrinsic emission at 5.277 eV and the second phonon replica of the intrinsic emission at 5.330 eV in the PL spectra, indicating the high crystallinity of our diamond sample. The main optical characteristics of intrinsic recombination radiation for single crystal diamond at low temperatures have been reported and its light emission mechanism has been discussed in this paper.
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