Abstract

In this research, a new application of reduced graphene oxide (rGO) for a complementary metal-oxide-semiconductor (CMOS)-MEMS infrared (IR) sensor and emitter is proposed. Thorough investigations of IR properties including absorption and emission were proceeded with careful calibration and measurement with a CMOS thermoelectric sensor. The thermocouples of the sensor consist of aluminum and n-polysilicon layers which are fabricated with the TSMC 0.35 μm CMOS process and MEMS post-process. In order to improve the adhesion of rGO, a sensing area at the center of the membrane is formed with an array of holes, which is easy for the drop-coating of rGO material upon the sensing region. To evaluate the performance of the IR sensor with rGO, different conditions of the IR thermal radiation experiments were arranged. The results show that the responsivity of our proposed CMOS-MEMS IR sensor with rGO increases by about 77% compared with the sensor without rGO. For different IR absorption incident angles, the measurement of field of view shows that the CMOS-MEMS IR sensor with rGO has a smaller view angle, which can be applied for the application of long-distance measuring. In addition, characteristics of the proposed thermopile are estimated and analyzed with comparisons to the available commercial sensors by the experiments.

Highlights

  • Infrared (IR) elements with high thermal radiation and absorption capabilities can be used in many applications, such as temperature sensing and gas detection, among others

  • Our research suggests that it will be more practical in thermal IR sensor applications and compatible with standard complementary metal-oxide-semiconductor (CMOS) processes and more simplified signal processing

  • The proposed CMOS-MEMS IR sensor includes a floating membrane with a sensing area where the sensing material was drop-coated. This CMOS-MEMS thermopile was designed using the materials from the CMOS layers of aluminum and n-polysilicon as the thermoelectric elements

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Summary

Introduction

Infrared (IR) elements with high thermal radiation and absorption capabilities can be used in many applications, such as temperature sensing and gas detection, among others. In 2018, Abid et al, reported a facile and cost-effective approach to develop a self-standing rGO film-based optical sensor and its low-temperature performance analysis [29]. Most of these studies are based on the sensing technology of graphene oxide in the quantum detector, which is devoted to the enhancement of the quantum efficiency and conductivity of quantum detectors. We give a new approach to improve the sensitivity of a CMOS-MEMS IR sensor with drop-coated rGO to achieve high thermal radiation absorption. Through measurement and analysis, the relevant characteristics of the different sensors are compared to verify its excellent thermal radiation absorption and emission characteristics

Design and Fabrication
Post-Processing
Characteristics Measurement and Analysis
Thermal
Analysis of Thermal Radiation Absorption
Measurement of Thermal Radiation Emission
Analysis of the Thermal
A Ao εathe εs σT
Measurement
Measurement and Analysis of Frequency Response and Thermal Time Constant
Measurement of Noise
Analysis of SNR
Figure of Merit of the Sensor
Measurement and Analysis of Incident
Findings
Conclusions
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