Abstract
This paper is devoted to development of technology of formation and obtaining of the design of a field emitter of electrons with an active region based on carbon nanostructures. The main idea of this technology is using of plasma methods, such as plasma chemical etching and plasma chemical vapor deposition. Using a magnetron sputtering method, sublayers V, Cr and Al nm were obtained with different thickness based on its material characteristics for prevent formation of silicates with catalytic centers material. This thing allows forming compounds, which serve as a metallic contact to field emission structure. A catalytic layer of nickel was obtained by magnetron sputtering. Based on the studies, a prototype of a field emitter with work characteristics, which are corresponding to the specified formation parameters, was obtained. Those characteristics are threshold field strength 6.7·108 V/m, field amplification factor 7.9·107 and electron work function in range from 3.1 to 5.3 mA/cm2.
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