Research of the synthesis of radiant intensity indicatrix of multicomponent beam diode module

Ruslan Yakovliev,Vasyl Kovalskyi,Serhii Honchar,Maryna Petchenko,Yurii Shmelov,S Semerikov,S Sakhno,O Bondarenko,T Vakaliuk,S Klimov,S Chukharev,A Iatsyshyn,H Danylchuk,A Striuk,P Nechypurenko,V Osadchyi

doi:10.1051/e3sconf/202128005010

Abstract

Widespread use of semiconductor radiation sources in optoelectronic devices for various purposes requires further study of the mechanisms of formation of photometric characteristics of the integrated device in the near illumination zone, where the law of inverted squares is violated. A mathematical model of the multicomponent beam-diode module is proposed. On its basis the analysis of influence of the parameters of separate beam sources on the deformation of the indicatrix of radiant intensity at transition from the far zone to the near one is carried out. It is shown that the determining parameter of the indicatrix change in longitude and polar distance is the distribution in the plane of the modulus of the product of the radiant intensity of a single diode on its polar radius vector. The displacement of the polar angle of the maximum of the vector of the diode radiant intensity is more significant for wide radiation patterns than for concentrated ones. For specific parameters of diodes and geometry of their location the suitability of the proposed model for a priori modeling of beam-diode modules is illustrated.

Highlights

Successful development of unmanned aerial vehicles encourages the development and improvement of optoelectronic devices (OED) for light signals and reconnaissance purposes. They are mainly implemented by introduction of new element base of higher quality where not the last place belongs to artificial sources of infrared (IR) radiation
Increasing the range of security and reconnaissance OEDs is achieved by their transition to active mode, increasing the power of sources, the use of longer wavelengths of the IR range of electromagnetic waves (EMW)
Suppose we have an integrated planar module assembled from N beam-diode point sources

Summary

Introduction

Successful development of unmanned aerial vehicles encourages the development and improvement of optoelectronic devices (OED) for light signals and reconnaissance purposes. The method of virtual transfer of radiating components to one point to obtain a diagram of the direction of light intensity of the integrated device can be approximated only in the far illumination zone.

Results

Conclusion