Abstract
This paper presents the results of modeling and fabrication of silicon membranes for acoustic sensors with resonant frequency from 2 kHz to 60 kHz and pressures from 0.1 to 14 Pa. An analysis of the constructive and mechanical parameters of monocrystalline silicon membranes is performed. The range of membrane edge length (6-20 mm) at a fixed thickness of 50 μm determined. The etching process of a silicon wafer by anisotropic wet etching was studied. A process flow for manufacturing silicon membranes is proposed. The results of experimental studies of amplitude-frequency characteristic of membranes are obtained.
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