Abstract
The SiO2 film as an insulator in InP MOS structure was grown by mercury-sensitized photo induced chemical-vapor deposition (photo-CVD) utilizing gaseous mixture of monosilane (SiH4) and nitrous oxide (N4O) under 253.7 nm ultraviolet light irradiation. The PHOTOX SiO2 film (i.e., SiO2 film prepared by photo-CVD system) deposited at 250° C has a refractive index of 1.46 and breakdown field strength of 7.0 MV/cm. The 1 MHz capacitance-voltage characteristics of the InP MOS diode was measured to study the interface state densities. The minimum value is 1.2 × 1011 cm−2eV−1 for the sample prepared at a substrate temperature of 250° C.
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