Abstract
This brief presents 2-D numerical simulation results of single-event burnout (SEB) in power UMOSFETs (trench-gate MOSFET) and investigates hardening solutions to SEB such as carrier lifetime reduction, emitter doping decrease, and p+ plug modification. We find that the linear energy transfer (LET) does not have an important influence on the occurrence of SEB. In addition, we present the effect of a varied ion strike position, and the result is that the position in the middle of the neck is easier to SEB than the other positions. In addition, the single-event gate rupture (SEGR) threshold voltages in different LETs are given in order to compare with SEB.
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