Research of single event burnout in a high-performance radiation-hardened SOI lateral power MOSFET

Abstract

In this paper, a 60 V radiation-hardened SOI lateral power MOSFET (LDMOS) device is proposed and single event burnout (SEB) failure mechanism of the device is investigated by Sentaurus simulator. The SOI LDMOS device, with 2 μm drift region and extended N+ drain region, can achieve optimal breakdown voltage (BVDS, 67 V) and specific on-resistance (Ron,sp, 5 mΩ·cm2), while Ron,sp of the device without extended N+ drain is 5.6 mΩ·cm2. Sensitive region of the device for SEB is analyzed and the most sensitive region for SEB is near the center of drift region. The influence of different linear energy transfers (LETs) on SEB threshold voltage is explored and the device can survive at the full drain to source voltage (VDS) biasing of 60 V even for a highly-energetic ion with LET of 1 pC/μm (96 MeV·cm2/mg). Besides, heavily-doped P+ region is inserted on the source side and parameters of source region are optimized to improve SEB tolerance of the device. Second breakdown voltage of the device which correlates with SEB failure threshold is up to 66 V, indicating excellent SEB hardness of the device. Eventually, SEB failure mechanism of the device is investigated in detail and the action of the parasitic npn bipolar junction transistor (BJT) inherent in the device structure is the key to SEB tolerance of the device.