Abstract
A Si pn junction diode and a GaAs Schottky diode were prepared for studying the basic mechanism of charge collection followed by high energy charged particle incidence in order to improve the resistance against single event upset. A 2 μm wide and 20 μm long rectangular Al electrode attached to a circular Al electrode with a 50 μm diameter was made on a 2.5 μm thick epilayer (minority carrier density 2 × 10 15 /cm 3). Both a Schottky electrode of Al (5 μm × 110 μm) and two ohmic electrodes of AuGe Ni (110 μm × 110 μm) were made on a 2 μm thick epilayer (7.3 × 10 15 /cm 3) grown on a semi insulator GaAs substrate ( 1 × 10 7 Ω cm ). The internal device structure was examined by the IBIC (Ion Beam Induced Charge) method using a 2 MeV He + ion microbeam. IBIC images clearly show an Al electrode, the SiO 2, and an epilayer. These results were then used to improve the qualities of the test diodes.
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