Abstract
Experimental measurements and simulation results have shown that the dominant noise source of current noise changes from thermal noise to shot noise with scaling of MOSFET, and shot noise were suppressed by Fermi and Coulomb interactions. In this paper, Shot noise test system is established, and experimental results proved that shot noise were suppressed, and the expressions of shot noise in realistic nano-MOSFETs are derived with considering Fermi effect, Coulomb interaction and the combination of the both co-existence, respectively. On this basis, the variation of shot noise with voltage, temperature and source-drain doping were researched. The results we obtained are consistent with those from experiments and the theoretically explanation is given. At the same time, the shot noise test system is suitable for traditional nanoscale electronic components; the shot noise model is suitable for nanoscale MOSFET.
Highlights
With the device scaling down, the driving capability and switching speed is increased, and the noise is increased.[1,2,3] As the channel length decreased, the noise model is no longer applicable in long channel MOSFET, and the dominant noise changes from thermal noise to shot noise
The experimental and simulation results have proved the existence of shot noise in nano-MOSFET,[4,5,6,7] and the noise were suppressed by Fermi and Coulomb.[8,9,10,11]
The research mentioned the theory and studied about shot noise suppression with mesoscopic conductor in nano-MOSFET, but it neither do in-depth research, nor give shot noise expression;[6] the literature[1] gave an expression, but it did not consider the suppression of Fermi and Coulomb
Summary
With the device scaling down, the driving capability and switching speed is increased, and the noise is increased.[1,2,3] As the channel length decreased, the noise model is no longer applicable in long channel MOSFET, and the dominant noise changes from thermal noise to shot noise. The experimental and simulation results have proved the existence of shot noise in nano-MOSFET,[4,5,6,7] and the noise were suppressed by Fermi and Coulomb.[8,9,10,11]. The research mentioned the theory and studied about shot noise suppression with mesoscopic conductor in nano-MOSFET, but it neither do in-depth research, nor give shot noise expression;[6] the literature[1] gave an expression, but it did not consider the suppression of Fermi and Coulomb. Shot noise is the main component of excess noise in nano-MOSFET, suppression of shot noise can effectively reduce the excess noise due to the reduction of the size of MOSFET This requires a clear relationship between the shot noise and dispersion parameters of device.
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