Abstract
Novel method of boron diffusion at low temperatures between 1150 and 1300°C is used for the formation of both p‐i SiC junction and i‐region in one technological process. As the junction formation conditions in this method are essentially different from those in the conventional diffusion (low temperatures and process of diffusion are accompanied by formation of structure defects), it is of special interest to identify advantages and disadvantages of a new method of diffusion. Developed SiC p‐i‐n junction diodes have fast switching time, and the duration of the reverse recovery current is less than 10 ns with a breakdown voltage of 120–140 V. Fabricated diodes possess capability to operate at temperatures up to 300°C. As the temperature of diffusion process is lower than the melting temperature of silicon, this new technology allows fabrication of diodes on the base of SiC/Si epitaxial structures.
Highlights
Silicon carbide- (SiC-) based devices have number of advantages over traditional silicon and gallium arsenide analogues
Power diodes based on silicon carbide made by diffusion technology have maximal breakdown voltage ∼700 V for 4H polytype and ∼1000 V for the 6H polytype of silicon carbide [12, 13]
As the conditions of junction formation in this method are essentially different from those in the conventional diffusion, it is interesting to identify the advantages and disadvantages of a new method of diffusion
Summary
Silicon carbide- (SiC-) based devices have number of advantages over traditional silicon and gallium arsenide analogues One of such advantages is high operating temperature of SiC devices [1,2,3], which makes this material very promising for power and extreme electronics [2,3,4,5,6,7]. E p-region of SiC diodes can Advances in Materials Science and Engineering be conventionally formed by thermal diffusion of shallow impurity (at T > 2000°C) or ion implantation of aluminum in SiC with concentrations up to 1019 cm−3 [9, 22]. As the conditions of junction formation in this method are essentially different from those in the conventional diffusion (low temperatures and process of diffusion are accompanied by formation of structure defects), it is interesting to identify the advantages and disadvantages of a new method of diffusion
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