Research of optimal parameters in MOSFET structure based on wide band gap semiconductor material GaN

Abstract

In this paper, the characteristics of GaN (Gallium Nitride) MOSFET are discussed using the simulation method. DC characteristics of GaN MOSFET is calculated at room temperature, the relationship between the transfer characteristics and output, and four key parameters inside, i.e., oxide thickness, gate length, channel doping concentration, dielectric constant are simulated. Furthermore, Analysis of transfer characteristics and output characteristics are conducted when temperature increases from 300 K to 600 K. Simulation results show that the recession of device performance is due to the decay of mobility and the saturation drift velocity change along with operating temperature. The analog analysis is also used to simulate different structure of GaN MOSFET devices. In conclusion, optimal performance will be achieved by changing the parameters of GaN MOSFET devices.