Research of MPPT algorithm with stability and rapidity

Abstract

This paper presents the engineering analytical models of silicon solar cells. The main advantage of the model is four parameters: the short-circuit current (I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">SC</inf> ); the open-circuit voltage (U <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OC</inf> ); the maximum power point current (I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">m</inf> ); the maximum power point voltage (U <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">m</inf> ) of a PV module under standard test conditions (STC) provided by manufacturers are only used With some additional coefficients which typical values are given, it is possible to describe any I–V curve, taking into account cell temperature and solar radiation. Maximum Power Point Tracking (MPPT) control method based on models of silicon solar cells was proposed based on the analysis of the photovoltaic cell’s V-I characteristic and the “Perturbation and Observation” (P&O). This article realizes the maximum power point tracking by working out U <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">m</inf> and I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">m</inf> .