Abstract
The varied-depth nanoscratch test is carried out on the (111) plane of single crystal GGG along 〈110〉 direction. Two indenters with different tip radii are used in this work. During the nanoscratch process, continuous chips and the bottom of the groove with micro cracks and slip lines are obtained by using a sharp indenter. Segmental chips and the bottom of the smooth groove are obtained by using a blunt indenter. Compared with using a blunt indenter, using a sharp indenter can obtain deeper scratch depth, deeper residual depth and lower elastic recovery under the identical normal force. The subsurface deformation in the ductile removal regime is composed of plastic flow zone, micro crack zone and median cracks. The ductile deformation mechanism of single crystal GGG during the nanoscratch process is a combination of “material poly-crystallization of nanocrystalline” and “amorphous transformation” with no other forms of crystalline structure found. The generation of median cracks is caused by the severe slip of crystal planes which are subjected to the concentrated stress.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
