Abstract
The split-drain magnetic field effect transistor (MAGFET) based on nanopolysilicon thin film transistor (TFT) is fabricated on <100> high resistivity silicon substrates by (complementary metal oxide semiconductor) CMOS technology in this paper. It contains source (S), drain1 (D1), drain2 (D2) and gate (G), and adopts nanopolysilicon thin films and nanopolysilicon/high resistivity silicon heterojunction interfaces as the magnetic field sensing layers. The influence of the channel size and shapes on the transistor, are studied to further improve its magnetic sensitivity. When the ratio of channel length and width (L/W) of MAGFET is 80 μm/160 μm, VDS=5.0 V, the MAGFET with convex channel has higher magnetic sensitivity than the rectangle and concave, the absolute current magnetic sensitivity SI and the absolute voltage magnetic sensitivity SV of the proposed sensor reach the maximum values, and are 0.021 mA/T and 55 mV/T, respectively.
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