Abstract
The numerical impact modeling of some external effects on devices based on AlGAs/InGaAs/GaAs heterostructures (pHEMT) was carried out. The mathematical model was created that allowed to predict the behavior of the drain current depending on condition changes on the heterostructure in the barrier region and to start the process of directed construction optimization of the devices based on AlGaAs/InGaAs/GaAs pHEMT with the aim of improving their noise characteristic.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
