RESEARCH OF INFLUENCE OF MOLAR COMPOSITION ON ELECTRON MOBILITY IN ALUMINUM-GALLIUM ARSENIDE

Abstract

Improvement in the technology of growing multicomponent semiconductors and the study of their potential applications contribute to the development of semiconductor devices with improved characteristics. Aluminum gallium arsenide is a promising three-component semiconductor in terms of crystal lattice matching, which caused a comprehensive study of the material in order to create high-performance electronic and optoelectronic devices on its basis. Predicting the prospects for creating devices based on certain materials requires a thorough knowledge, first of all, of their electrical properties.It should be noted that the possibilities of modeling the mobility of electrons in aluminum-gallium arsenide are not sufficiently disclosed in the scientific and technical literature. The aim of this work is to simulate the dependence of the electron mobility of the AlxGa1-xAs solid solution on the molar composition x.The simulation was carried out by the method of relaxation equations; based on the three-valley model of the conduction band. A technique is presented and a numerical experiment is carried out to determine the dependence of the mobility of charge carriers on the molar composition x of the solid solution. Attention is drawn to the peculiarity of modeling the processes of intervalley nonequivalent scattering, which corresponds to a significant convergence ofenergy valleys to each other. A model dependence of the Hall electron mobility in AlxGa1-xAs is obtained in the full range of molar composition values and compared with experimental results. Additional simulation results are presented that contribute to the understanding of the processes leading to the appearance of a specific feature of the dependence of the electron mobility on the molar composition of AlxGa1-xAs.A set of initial modeling parameters is determined, which provides good agreement with the experimental results considered in the work. The obtained results of numerical simulation open up opportunities for additional studies of the properties of aluminum-gallium arsenide. A technique for modeling the dependence of charge carrier mobility on the molar composition for three-component solid solutions is proposed.