Abstract
A study was made of AlxGa1-xAs wide-bandgap potential barriers influence on photoluminescence and dark current-voltage characteristics of InAs/GaAs heterostructures obtained by an ion-beam deposition method. It was established that employing AlxGa1-xAs barriers cause a shift of InAs quantum dots ground-state photoluminescence emission peak in high-energy band (blue shift), increase in intensity and decrease of full width a half at maximum. In addition, the measurements of dark current-voltage characteristics show that increase of Al content in barrier leads to decrease of bias voltage (to 0.48 V) of altering charge carriers transfer mechanism from thermoelectron emission to tunnelling assisted by external electric field. It was established that the use of the Al0.4Ga0.6As potential barrier can produce minimal dark current (10−8 A) in InAs/GaAs heterostructures with quantum dots.
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