Abstract
A theoretical research of the indium phosphide impulse properties has been carried out. The effect of the overshoot of the charge carriers drift velocity is analyzed. The influence of the electric field impulse parameters on the time and space distribution of the drift velocity was analyzed numerically. It is shown that the effect of the high electric field rectangular impulse on indium phosphide causes a short-term overshoot of the drift velocity. If the electric field is becoming stronger, the peak value of the drift velocity is getting higher but the duration of the overshoot is reducing. It is showing that the impulse duration does not affect the magnitude of the overshoot and the rate of relaxation processes. With increasing of the rectangular Impulse front duration peak values of high field overshoot are reducing. The impulse properties of indium phosphide and gallium arsenide were compared.
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