Abstract
The large power consumption and the wide distribution of switching parameters for unipolar resistance switching are major hurdles to non-volatile memory application. In this letter, the stacked structure Pt/NiO/TiO2/Pt was investigated to overcome the mentioned problems. TiO2 thin film was formed on NiO by oxidation of metallic Ti thin film through rapid thermal process (RTP) in oxygen atmosphere. The sharp TiO2 (202) peak and NiO (200) peak observed by the X-ray diffraction measurement. This stacked bilayer structure is favorable for reducing reset current in comparison with single layer structure. This is attributed to a small amount of heat loss during rupturing process of conductive filaments. It is suggested that the conductive filament rupture and rejuvenation was happened at the interface between TiO2 and NiO by controlling switching sequence. Furthermore, the diffused Ti in NiO also can result in stabilization of switching parameters.
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