Abstract

SiGe (Silicon Germanium) is a common semiconductor material with many excellent properties, and many photonic-integrated devices are designed and fabricated with SiGe material. In this paper, two photonic-integrated SiGe waveguides are researched, namely the SiGe-SOI (Silicon Germanium-Silicon-On-Insulator) waveguide and the SiGe-OI (Silicon Germanium-On-Insulator) waveguide. In order to verify which structure has the better waveguide performance, two waveguide structures are built, and the effective refractive indexes and the loss characteristics of the two waveguides are analyzed and compared. By simulation, the SiGe-OI optical waveguide has better losses characteristics at a wavelength of 1.55 μm. Finally, SiGe-OI and SiGe-SOI waveguides are fabricated and tested to verify the correctness of theoretical analysis, and the experimental results show that the transmission losses of the SiGe-OI waveguide are respectively decreased by 36.6% and 28.3% at 400 nm and 600 nm waveguide width in comparison with the SiGe-SOI waveguide. The results also show that the SiGe-OI waveguide has better loss characteristics than those of the SiGe-SOI waveguide at the low Ge content.

Highlights

  • The optical waveguide is the basic device of optical interconnection, and is the basic unit of optical devices

  • The results show that the SiGe-OI waveguide has better loss characteristics than those of the

  • Ge content is an important parameter for SiGe optical waveguides, and the effective refractive indexes of SiGe waveguides can be changed by adjusting Ge content

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Summary

Introduction

The optical waveguide is the basic device of optical interconnection, and is the basic unit of optical devices. A waveguide with SOI material has the advantages of large refractive index difference, strong limiting effect for optical wave, low absorption loss, small device size, and the ability to increase the integration degree of the photonic circuit. When the SiGe waveguide is implemented in SOI, the effective refractive index of the waveguide layer can be increased, which means that device sizes and losses can be decreased. Materials 2020, 13, 1877 is becoming more and more important, and the manufacture of most SiGe optical waveguides are currently based on SOI technology [11]. The SiGe optical waveguide technology based on the SOI substrate can effectively improve the dielectric refractive index of the waveguide, so as to further reduce the size of the device, reduce the loss and improve the integration.

Mechanism and Manufactures
Growing the SiGe layer on the top of the membrane bysilica
Results and Discussion
The relationship between coupling efficiency and
Conclusions
Full Text
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