Research in Turn-on Delay of Semiconductor Lasers

Abstract

This paper derived out a closed expression describing the time evolution of the carrier density within the turn-on period of a semiconductor laser, for the case that the Auger effect is considered with a term which is proportional to the cube of the carrier density. As a result, an explicit analytical expression for the turn-on delay of the diode laser has also been deduced. Semiconductor laser works by incentives, the use of semiconductor material (both using electronic) transition between can shine in a semiconductor crystal cleavage plane form two parallel reflection mirror as a mirror, and form a resonant cavity, the oscillation, feedback, produce light amplification of radiation, the output laser. Semiconductor laser advantage is small size, light weight, reliable operation, less consumption, high efficiency, etc. Nonradiative recombination (in particular, the Auger effect) and the carrier leakage over the hetero barrier have been reported theoretically as well as experimentally for 1.3 ym wavelength GaInAsP/InP crystals. Most of these works have concentrated on 1.3 pm lasers. As for 1.5-1.6 pm GaInAsP/InP crystals, the effects of the intervallic band absorption were reported, and the nonradiative recombination in relation to the carrier lifetime has been measured. Auger effect is associated with an electron energy reduced at the same time, another higher electron energy transition process. Will launch photoelectron, auger electron (cannot be explained in the photoelectric effect) to atoms and molecules becomes a phenomenon known as auger effect ion of higher order. According to this effect made auger electron spectrometer, has been on the surface physical and chemical reaction kinetics, metallurgy, electron, etc., within the territory of the high sensitivity of detection and rapid analysis. Auger effect is one of the atomic emission result in one or more other electronic (auger electron) is rather than the radiation emitted x-rays (explained in the photoelectric effect), the atoms and molecules become advanced ion physical phenomena, is associated with an electron energy reduced at the same time, the other one (or more) increased electron energy transition process. It named Auger effect because of the French Pierre Victor Auger. In 1925, Pierre Victor Auger on the analysis of the Wilson cloud chamber found after the results of the experiment. Experiments using high energy X-rays to electronic gases, optoelectronics and observed. For electronic measurement shows that the trajectory has nothing to do with the frequency of the photon, this suggests that the mechanism is the atomic internal electronic ionization energy exchange or no radiation transition. Use of basic