Abstract
AbstractThe Center for Research on Interface Structures and Phenomena (CRISP) is a National Science Foundation (NSF) Materials Research Science and Engineering Center (MRSEC). CRISP is a partnership between Yale University, Southern Connecticut State University (SCSU) and Brookhaven National Laboratory. A main focus of CRISP research is complex oxide interfaces that are prepared using epitaxial techniques, including molecular beam epitaxy (MBE). Complex oxides exhibit a wealth of electronic, magnetic and chemical behaviors, and the surfaces and interfaces of complex oxides can have properties that differ substantially from those of the corresponding bulk materials. CRISP employs this research program in a concerted way to educate students at all levels. CRISP has constructed a robust MBE apparatus specifically designed for safe and productive use by undergraduates. Students can grow their own samples and then characterize them with facilities at both Yale and SCSU, providing a complete research and educational experience. This paper will focus on the implementation of the CRISP Teaching MBE facility and its use in the study of the synthesis and properties of the crystalline oxide-silicon interface.
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