Abstract
During the past decades, HgCdTe photovoltaic infrared focal plane array (PV-IRFPA) imaging technology has been matured. Now, it develops into the third generation. The detector fabrication process and testing process should be optimized to get more advanced performance detector. So the means and methods to evaluate the performance of the detector is especially important. The passivation films on the surface of the detector chip affect the performance of detector seriously, which is because the band gap of the HgCdTe is rather narrow. So the surface passivation has been recognized as a crucial step in the fabrication progress of HgCdTe photovoltaic detectors. In this paper, we do the regular IV test on back-to-back pixels’ p-n junctions, and then we find out that the resistance of the passivation films is much lower than we thought. So the I-V test on back-to-back p-n junctions may be a quick and easy evaluation method for the quality of the passivation films.
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