Abstract

In this work, we have modeled and simulated the electrical performance of CIGS thin-film solar cell using one-dimensional simulation software (SCAPS-1D). Starting from a baseline model that reproduced the experimental results, the properties of the absorber layer and the CIGS/Mo interface have been explored, and the requirements for high-efficiency CIGS solar cell were proposed. Simulation results show that the band-gap, acceptor density, defect density are crucial parameters that affect the performance of the solar cell. The best conversion efficiency is obtained when the absorber band-gap is around 1.2 eV, the acceptor density at 1016 cm−3 and the defect density less than 1014 cm−3. In addition, CIGS/Mo interface has been investigated. It appears that a thin MoSe2 layer reduces recombination at this interface. An improvement of 1.5 to 2.5 mA/cm2 in the current density (Jsc) depending on the absorber thickness is obtained.

Highlights

  • The thin-film solar cells represent a considerable hope in the field of PV solar cells

  • Simulation results show that the band-gap, acceptor density, defect density are crucial parameters that affect the performance of the solar cell

  • The limitation of Voc may be due to defects that increase with the gallium rate [25]

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Summary

Introduction

The thin-film solar cells represent a considerable hope in the field of PV solar cells. The efficiency of this solar cell has evolved rapidly in recent years due to the maturity of manufacturing techniques. Indium is expensive and it availability can become an issue if the flat panel display industry increases its consumption even more [3] To overcome this problem, several alternatives are proposed. The reduction of the CIGS layer thickness appears to be a viable track If this thickness could be reduced, the use of indium and gallium will be considerably reduced and the deposition time [5]. Starting from a model that reproduces the experimental results, the simulation allowed us to highlight how band-gap, absorber bulk defect density and the Mo/CIGS interface affect the electrical parameters in relation to the absorber thickness

Device Structure
Numerical Modeling
Effect of the Absorber Band-Gap
Effect of Acceptor Concentration
Effect of Absorber Defect Concentration
Conclusion
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