Abstract
Four Te-doped InSb crystals were directionally solidified under microgravity conditions at the International Space Station (ISS). Three Te-doped InSb crystals were grown at R=5 mm/h. One crystal was grown at R=3.33 mm/h. The distribution of Te was measured using secondary ion mass spectroscopy (SIMS). The initial transients in Te concentration were found to be consistent, yielding a diffusivity of Te in InSb melts of D=1×10 −5 cm 2/s. One experiment revealed a diffusion controlled final transient. In all experiments, the charge was pressurized by a piston and spring device, to prevent de-wetting.
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