Abstract
The reproducible and reliable resistive switching is observed in the ultrathin Bi2FeCrO6 (BFCO) epitaxial film on (001) SrTiO3 substrate with SrRuO3 as the bottom electrode. The as-grown BFCO film allows its ferroelectric polarization switching under external electric field. With a 100-nm-radius tip contacting film surface, a stable bipolar resistive switching was observed through the conductive atomic force microscope. Furthermore, the resistive switching at negative bias was observed and its high/low current ratio is above 15 among a thousand of current versus voltage curves measured by the scanning tunneling microscope with a non-contacting nm-scale tip. It is argued that this transport mechanism is due to quantum tunneling, and the resistive switching in these junctions is because of ferroelectric switching.
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