Abstract
The preparation of tin dioxide films by low energy reactive sputtering of tin and tin‐antimony (1‐10% wt. Sb) in an oxygen – argon atmosphere is described. The dependences of oxygen content in the range from 0 to 50%, target compositions, substrate temperature of 300 K‐573 K on minimum resistivity at satisfactory transmittance and on reproducibility are discussed. The correlation between the electrical and optical properties and the microstructure of the films is shown.
Highlights
Methods of preparation of conductive transparent thin films based on doped tin and indium oxides have been developed in connection with the technology of optoelectronic devices
Obtaining low resistivity and high transmittance simultaneously requires the close control of sputtering conditions
The results presented establish that it is possible to produce thin transparent conductive films of doped tin oxide by the low energy reactive d.c. triode sputtering method
Summary
Methods of preparation of conductive transparent thin films based on doped tin and indium oxides have been developed in connection with the technology of optoelectronic devices. The tin oxide films are the conductive electrodes in the devices and for this a low resistivity and high transparence with good stability of these parameters is required. Conductivity of SnOx films is generally attributed to oxygen vacancies, tin interstitials and the type and quantity of the dopants. These factors are connected with technological parameters such as composition and nature of gaseous atmosphere, composition of target, substrate temperature and sputtering efficiency. In this paper the method of tin dioxide film preparation by reactive low energy sputtering from metallic targets of tin and tin-antimony alloys in an argon-oxygen atmosphere is reported. With regard to the reactive sputtering the phenomena on the target surfaces and their influence on the film properties are discussed in detail
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