Abstract
The irradiation with 1.2 MeV He+ ions to various fluences was successfully used for modification of graphene oxide (GO). The elemental composition of the GO foils before and after He+ ion irradiation was investigated using Rutherford Backscattering Spectrometry and Elastic Recoil Detection Analysis. The chemical composition and structural changes of the GO foil surface were characterized by X-Ray Photoelectron and Raman spectroscopy and changes in the electrical properties was studied by standard two point method. The obtained data indicate the removal of oxygen functionalities and growth of the graphene domains on the GO surface that leads to the improvement of surface conductivity which is a growing function of the ion fluence.
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