Abstract
Abstract In the study of semiconductor electronic breakdown we observe the self-generated formation of spatio-temporal dissipative structures, when a bias voltage is applied at liquid-helium temperature. The underlying nonlinear physics of impurity impact ionization reveals critical phase transition behavior by varying the temperature at constant voltage
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
