Abstract
For investigating the fundamental characteristics and resolution limit of patterns replicated with synchrotron orbital radiation (SOR), a computer simulation program, synchrotron orbital radiation lithography simulation system (sorsis) has been developed and resulting resist pattern profiles have been analyzed in detail. In sorsis, Fresnel integrals are performed by a new model based on introducing the SOR wavelength distribution, mask contrast, and phase difference into calculations. Positive-type resist replication pattern profiles are calculated to evaluate pattern characteristics and are compared with experimental results. These results derive a resolution limit evaluation method, representing the equation W=ε(Gλp /2)1/2.3 , where W is the minimum linewidth, G the proximity gap, λp the wavelength peak, and ε the parameter mainly determined by resist characteristics and x-ray mask absorber thickness. In this way, optimum conditions for precise pattern replication and accurate pattern profile control can be realized easily.
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