Replacing the Electron-Hole Transport Layer by Doping: Optimization of Tin-Based Perovskite Solar Cells from a Simulation Perspective

Abstract

Due to their non-toxic nature and good charge transport properties, tin-based perovskite solar cells are gaining attention. Here, we used SCAPS-1D (Solar Cell Capacitance Simulator) to simulate and analyze constructed devices. We then created n-MASnI3 and p-MASnI3 layers that facilitate electron-hole transport by changing the doping concentration of MASnI3 in the perovskite absorber layer, replacing the conventional electron transport layer (ETL) and hole transport layer (HTL). This simplifies the manufacturing process to reduce cost and realize the conversion of lead-free perovskite solar cells. By studying the thickness of n-MASnI3 and p-MASnI3, and the acceptor and donor doping concentrations (ND and NA), we explored the effects on each device performance parameter in terms of energy band distribution, recombination rate variation, and external quantum efficiency. The first optimization of the electron transport layer and hole transport layer was thereby achieved. A second optimized analysis of the doping concentration of i-MASnI3 absorber layer was achieved. Finally, we optimized the device performance parameters as V OC = 0.8827 V, J SC = 23.1720 mA cm−2, FF = 63.1390% and PCE = 12.9144%.