Abstract
There are several configurations of a microwave chemical vapor deposition (MWCVD) reactor. The common characteristic of this reactor is the presence of waveguides. We describe a method that replaces the waveguide, responsible for conducting electromagnetic waves, with a resonant cavity (RC) coupled to a low-pressure chamber. Using RCs over waveguides can help produce dense plasma, which can be used in dissociation processes as the reagents are forced to move within a cavity until they reach the reaction chamber. Based on the excellent performance of the system, it was possible to deposit silicon oxide (SiO2), with the aid of the argon gas mixture, oxygen, and tetraethylorthosilicate (TEOS), on a silicon substrate at room temperature. The film formed was analyzed using an interferometer and FTIR, concluding on the satisfactory quality of the film.
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