Abstract
Zn diffusions from spin-on films have been carried out into n-InP/p+-InGaAs/n-InP heterostructures, which were grown by metalorganic vapor phase epitaxy for heterojunction bipolar transistors with Mg as a p dopant. After diffusion, Mg was completely substituted by Zn and enriched in the spin-on film. In the presence of Mg, the indiffusion of Zn is strongly enhanced. By varying doping levels and diffusion conditions, the underlying mechanism is studied and compared to recent experiments with Be-doped AlGaAs/GaAs heterostructures.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
