Abstract
Recently developed techniques for producing high current, pulsed ion beams have suggested the possibility of a pulsed implanter technology. Potential advantages of such an approach include lower capital costs, and higher average beam currents for applications requiring metal ions which are difficult to produce in conventional dc sources. We report here the development of a prototype 80 kV pulsed implanter. This implanter runs at 32 pulses per second, 2 A (titanium) peak ion current, a 6 μs accelerating pulse length, and ~100 μA titanium particle current. Significant currents have been demonstrated for titanium, copper and carbon; ions from any conducting solid can be used in the ion source. The characteristics of the source are discussed along with implanter operating data. Our results suggest that the accelerating gap runs in a primarily source dominated mode. The absolute beam currents and charge state are characterized by surface analysis of implanted samples. Techniques for scaling this technology to high (> 20 mA) average currents are discussed.
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