Abstract
SiC MOSFET are now commercially available and show promising performances when considering static losses, commutations and long term reliability. The devices may face short-circuit conditions and knowing their capibility in terms of critical time and repetitive fault is mandatory before integration in commercial systems. This paper presents the short-circuit performances for two families of commercial devices in terms of critical energy, time and repetitve SC stress. It shows that both devices show similar critical time but very different behavior when stressed under repetitive SC pulses. These results demonstrate that SiC MOSFET reliability under repetitive short-circuit pulses strongly depends on the pulse length and device provider. This information will be crucial to design the system in order to limit the SC length depending on the application requirements.
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