Abstract
In order to develop a practical in situ cleaning method applicable for a silicon carbide epitaxial reactor, the silicon carbide film formation and the cleaning using chlorine trifluoride gas were repeated three times on the susceptor. The 40-μm-thick silicon carbide film was removed by the optimized condition consisting of the susceptor temperature, the chlorine trifluoride gas concentration and its flow rate of 330°C, 100% and 50 sccm, respectively, at atmospheric pressure for 120–180 min. The susceptor coating film having a round-shaped morphology had an allowable surface damage after the three repetitions of the film formation and cleaning.
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