Abstract
The influence of external stresses on the migration of interstitial impurity atoms (helium), caused by local heat at crystals' irradiation ( ʃ -ferrum) has been investigated by a computer simulation method (model of molecular dynamics). It is shown that the preferable reorientation of the interstitial He configurations (“static crowdion” [100] ) perpendicular to the applied stress vector takes place under the external load influence. This effect can be used at explanation of anomalous decrease of electrical resistance at low-temperature irradiation of stressed specimens of NbTi.
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