Abstract
Reordering of ion implanted amorphous Si layers with rapid thermal annealing (RTA) was investigated with spectroscopic ellipsometry. The reordering rates in the temperature range of 450-550/spl deg/C by RTA agree well with earlier studies using conventional furnace annealing. The reordering rate for a lower dose (As 3/spl times/10/sup 14/ cm/sup -2/) was found to be faster than that for a higher dose (As 4/spl times/10/sup 15/ cm/sup -2/), perhaps because of higher concentrations of knock-on implanted oxygen. The amorphous layer thickness for Ge ion implantation was same as that for equivalent energy and dose As ion implantation. However the reordering rate for Ge implanted layers was much slower than that of As implantation, almost same as that for Si ion implantation. In the case of 3/spl times/10/sup 14/ cm/sup -2/ As dose high reordering rate was observed for a thin (7 nm) layer as well as reordering at temperature, lower than 450/spl deg/C. It was due to the roughness of a wide transient layer and did not occur in case of high dose As implantation; 4/spl times/10/sup 15/ cm/sup -2/ because of a narrow transient layer.
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