Abstract
In this paper, two techniques were used for the removal of submicrometre sized alumina particles used in post-CMP (chemical mechanical polishing) applications. Alumina particles were deposited onto a silicon oxide wafer by dipping the wafer in the CMP slurry and then spin drying them. Megasonic cleaning and brush cleaning techniques were used to remove the slurry residue. The removal efficiency of each technique (contact and non-contact) was evaluated as a function of the process parameters. The removal of particles was studied as a function of the cleaning parameters including temperature, cleaning time, and megasonic power in the case of megasonic cleaning, and brush pressure, rotational speed, and cleaning time in the case of brush cleaning. The results show that both cleaning techniques can be effective in removing slurry residue under certain conditions. Longer cleaning times and higher pressures had adverse effects on contact cleaning. Similarly, longer times and higher megasonic power had adverse effects on non-contact cleaning.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
