Abstract
This paper discusses the relationship between ozone concentration and photoresist removal rate, and the removal of ion-implanted photoresists using high concentration wet ozone. The photoresist removal rates increased linearly with increasing ozone concentration. We achieved 3.84μm/min in ozone concentration of 30vol%. This value is four times as fast as the photoresist removal rate which is expected in a semiconductor manufacturing process. In ozone concentrations of 10vol% and 30vol%, the photoresist into which B ions were implanted with a dose of 5×1014 atoms/cm2 at acceleration energy of 70keV was removed. In ozone concentration of 30vol%, the ion-implanted photoresist removal rate was twice as fast as that of ozone concentration of 10vol%.
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